A. Bryant
Publications by Year
Research Areas
Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies, Integrated Circuits and Semiconductor Failure Analysis, Low-power high-performance VLSI design
Most-Cited Works
- → Low-power CMOS at Vdd=4kT/q(2002)77 cited
- → GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications(2012)63 cited
- → Energy optimality and variability in subthreshold design(2006)44 cited
- → The effects of gate field on the leakage characteristics of heavily doped junctions(1989)37 cited
- → The current-carrying corner inherent to trench isolation(1993)35 cited
- Sub-25nm FinFET with advanced fin formation and short channel effect engineering(2011)
- → Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates(2005)26 cited
- Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond(2011)
- → Dual stress liner enhancement in hybrid orientation technology(2005)23 cited
- → A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs(2015)20 cited