Kiyomi Naruke
Toshiba (Japan)(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Memory and Neural Computing, Advanced Data Storage Technologies, Thin-Film Transistor Technologies
Most-Cited Works
- → Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness(2003)190 cited
- → A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure(1992)147 cited
- → Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation(1983)81 cited
- → A self-convergence erasing scheme for a simple stacked gate flash EEPROM(2002)53 cited
- → A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation(1994)43 cited
- → The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy(1990)35 cited
- → A new flash-erase EEPROM cell with a sidewall select-gate on its source side(2003)34 cited
- → CMOS Shift Register Circuits for Radiation-Tolerant VLSI's(1984)11 cited
- → A self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection(1996)9 cited
- → A 151-mm$^{2}$ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology(2011)9 cited