Mohammed Réda Ramdani
Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf(DZ)Centre de Recherche sur l'Information Scientifique et Technique(DZ)
Publications by Year
Research Areas
Nanowire Synthesis and Applications, GaN-based semiconductor devices and materials, Quantum Dots Synthesis And Properties, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Predictive modeling of self-catalyzed III-V nanowire growth(2013)192 cited
- → Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires(2012)148 cited
- → Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius(2014)90 cited
- → Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz(2013)53 cited
- → Fast Growth Synthesis of GaAs Nanowires with Exceptional Length(2010)50 cited
- → Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates(2012)25 cited
- → RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)(2011)