K.-Y. Toh
IBM Research - Thomas J. Watson Research Center(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Radio Frequency Integrated Circuit Design, Analog and Mixed-Signal Circuit Design, Advancements in PLL and VCO Technologies
Most-Cited Works
- → An engineering model for short-channel MOS devices(1988)160 cited
- → Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology(2002)52 cited
- → A submicrometer high-performance bipolar technology(1989)41 cited
- → A 23-ps/2.1-mW ECL gate with an AC-coupled active pull-down emitter-follower stage(1989)32 cited
- → A 27 GHz 20 ps PNP technology(2003)23 cited
- → Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors(2002)20 cited
- → A 23 ps/2.1 mW ECL gate(2003)18 cited
- → The design and optimization of high-performance, double-poly self-aligned p-n-p technology(1991)18 cited
- → Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology(1987)9 cited
- → A 26 ps self-aligned epitaxial silicon base bipolar technology(1990)9 cited