Chan-Hoon Park
Samsung (South Korea)(KR)
Publications by Year
Research Areas
Advancements in Photolithography Techniques, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Nanowire Synthesis and Applications, Integrated Circuits and Semiconductor Failure Analysis
Most-Cited Works
- → Electrical characteristics of 20-nm junctionless Si nanowire transistors(2012)157 cited
- → Future of plasma etching for microelectronics: Challenges and opportunities(2024)115 cited
- → Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation(2011)44 cited
- → Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET(2012)31 cited
- → Analytic Model of S/D Series Resistance in Trigate FinFETs With Polygonal Epitaxy(2013)26 cited
- → Comparative study of fabricated junctionless and inversion-mode nanowire FETs(2011)20 cited
- → Dynamics of a Hybrid Serial-Parallel Robot for Multi-Tasking Machining Processes(2006)15 cited
- → Lens heating impact analysis and controls for critical device layers by computational method(2013)15 cited
- → The analysis of EUV mask defects using a wafer defect inspection system(2010)15 cited
- → The application of EUV lithography for 40nm node DRAM device and beyond(2009)9 cited