J. Holt
GlobalFoundries (United States)(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Silicon and Solar Cell Technologies, Semiconductor materials and interfaces
Most-Cited Works
- → High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography(2016)133 cited
- → High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography(2006)115 cited
- → Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography(2012)94 cited
- → 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL(2012)89 cited
- → Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography(2014)64 cited
- → A 7nm CMOS technology platform for mobile and high performance compute application(2017)59 cited
- High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper(2006)
- → High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors(2008)37 cited
- → Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs(2009)37 cited
- → On the integration of CMOS with hybrid crystal orientations(2004)32 cited