Alireza Yasan
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, Photocathodes and Microchannel Plates, ZnO doping and properties, Semiconductor Quantum Structures and Devices
Most-Cited Works
- → Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode(2006)173 cited
- → High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well(2004)168 cited
- → High quantum efficiency AlGaN solar-blind p-i-n photodiodes(2004)126 cited
- → 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes(2003)121 cited
- → Al Ga1−N for solar-blind UV detectors(2001)108 cited
- → Avalanche multiplication in AlGaN based solar-blind photodetectors(2005)98 cited
- → Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm(2002)92 cited
- → Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes(2003)77 cited
- → 320 × 256 solar-blind focal plane arrays based on AlxGa1−xN(2004)71 cited
- → Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire(2002)55 cited