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Jiyoung Kim | doi.page

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Jiyoung Kim

Johns Hopkins University(US)Korea Advanced Institute of Science and Technology(KR)The University of Texas at Dallas(US)Inha University(KR)Korea University(KR)Cornell University(US)Johns Hopkins Medicine(US)Kyungpook National University(KR)Chung-Ang University(KR)

Publications by Year

Research Areas

Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, MXene and MAX Phase Materials, Electronic and Structural Properties of Oxides, Ferroelectric and Piezoelectric Materials

Most-Cited Works

→ Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure(2016)397 cited
→ Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances(2018)334 cited
→ Metal Contacts on Physical Vapor Deposited Monolayer MoS₂(2013)319 cited
→ Template-Directed Synthesis of Oxide Nanotubes: Fabrication, Characterization, and Applications(2008)298 cited
→ HfO₂ on MoS₂ by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability(2013)298 cited
→ Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget(2017)290 cited

→ A chemically modified laser-induced porous graphene based flexible and ultrasensitive electrochemical biosensor for sweat glucose detection(2020)

281 cited

→ Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics(2008)266 cited

→ Graphene Flash Memory(2011)255 cited

→ HfSe₂ Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy(2014)240 cited