Tae‐Young Kim
Gwangju Institute of Science and Technology(KR)
Publications by Year
Research Areas
2D Materials and Applications, MXene and MAX Phase Materials, Graphene research and applications, Ferroelectric and Negative Capacitance Devices, ZnO doping and properties
Most-Cited Works
- → Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules(2015)232 cited
- → Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors(2013)219 cited
- → Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition(2014)132 cited
- → Irradiation Effects of High-Energy Proton Beams on MoS2Field Effect Transistors(2014)121 cited
- → Enhancement of photodetection characteristics of MoS2field effect transistors using surface treatment with copper phthalocyanine(2015)112 cited
- → Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms(2017)88 cited
- → Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules(2018)71 cited
- → Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes(2016)70 cited
- → Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields(2018)69 cited
- → Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts(2016)68 cited