Jincheng Zhang
Hefei University of Technology(CN)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Semiconductor materials and devices, Perovskite Materials and Applications
Most-Cited Works
- → Ultra-wide bandgap semiconductor Ga2O3 power diodes(2022)575 cited
- → Coordination Engineering of Single‐Atom Catalysts for the Oxygen Reduction Reaction: A Review(2020)441 cited
- → A simple and efficient solar cell parameter extraction method from a single current-voltage curve(2011)285 cited
- → Recent advances in single atom catalysts for the electrochemical carbon dioxide reduction reaction(2021)265 cited
- → Recent Advances in Carbon‐Supported Noble‐Metal Electrocatalysts for Hydrogen Evolution Reaction: Syntheses, Structures, and Properties(2022)264 cited
- → A photoluminescent hydrogen-bonded biomass aerogel for sustainable radiative cooling(2024)254 cited
- → Intermolecular Exchange Boosts Efficiency of Air‐Stable, Carbon‐Based All‐Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%(2018)250 cited
- → Modulating Hydrogen Adsorption via Charge Transfer at the Semiconductor–Metal Heterointerface for Highly Efficient Hydrogen Evolution Catalysis(2022)175 cited
- → 6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC(2022)171 cited
- → Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2(2018)166 cited