Yan Liu
Fudan University(CN)Institute of Microelectronics(CN)Shanghai Fudan Microelectronics (China)(CN)
Publications by Year
Research Areas
Radio Frequency Integrated Circuit Design, Advanced Memory and Neural Computing, Radiation Effects in Electronics, Transition Metal Oxide Nanomaterials, Advancements in PLL and VCO Technologies
Most-Cited Works
- → Secrets of RLHF in Large Language Models Part I: PPO(2023)19 cited
- → A Fully Inkjet-Printed Unipolar Metal Oxide Memristor for Nonvolatile Memory in Printed Electronics(2023)19 cited
- → A Non-Redundant Latch With Key-Node-Upset Obstacle of Beneficial Efficiency for Harsh Environments Applications(2023)17 cited
- → Fully Printed Electrolyte‐Gated Transistor Formed in a 3D Polymer Reservoir with Laser Printed Drain/Source Electrodes(2023)7 cited
- → High voltage generator circuit with low power and high efficiency applied in EEPROM(2012)6 cited
- → Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA(2024)4 cited
- → Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission(2024)2 cited
- → An 8-14GHz 180fs-rms DTC-Less Fractional ADPLL with ADC-Based Direct Phase Digitization in 40nm CMOS(2024)2 cited
- → Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties (Adv. Funct. Mater. 20/2024)(2024)1 cited
- → Circuit Design and Filtering Method for fA Level Current Measurement(2023)1 cited