Haiqiang Jia
Qinghai University(CN)University of Science and Technology of China(CN)Xiamen University(CN)Liaocheng University(CN)Chinese Academy of Sciences(CN)Hefei Institutes of Physical Science(CN)Guangxi Normal University(CN)Guangxi Institute of Botany(CN)Songshan Lake Materials Laboratory(CN)Beijing National Laboratory for Molecular Sciences(CN)Institute of Physics(CN)University of Chinese Academy of Sciences(CN)Renmin University of China(CN)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Ga2O3 and related materials, Metal and Thin Film Mechanics
Most-Cited Works
- → Temperature-dependent photoluminescence in light-emitting diodes(2014)178 cited
- → Recent Progress in GaN‐Based Light‐Emitting Diodes(2009)143 cited
- → Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range(2015)127 cited
- → Investigation of temperature-dependent photoluminescence in multi-quantum wells(2015)93 cited
- → Dependence of leakage current on dislocations in GaN-based light-emitting diodes(2004)69 cited
- → A novel wavelength-adjusting method in InGaN-based light-emitting diodes(2013)67 cited
- → White light-emitting diodes based on a single InGaN emission layer