Sun Woong Han
Samsung (South Korea)(KR)
Publications by Year
Research Areas
Thin-Film Transistor Technologies, ZnO doping and properties, 2D Materials and Applications, Transition Metal Oxide Nanomaterials, MXene and MAX Phase Materials
Most-Cited Works
- → Chemically exfoliated transition metal dichalcogenide nanosheet-based wearable thermoelectric generators(2016)282 cited
- → Efficient Hydrogen Evolution by Mechanically Strained MoS2 Nanosheets(2014)133 cited
- → Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor(2013)123 cited
- → Low-Temperature, Solution-Processed ZrO2:B Thin Film: A Bifunctional Inorganic/Organic Interfacial Glue for Flexible Thin-Film Transistors(2015)33 cited
- → Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy(2015)29 cited
- → Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure(2015)28 cited
- → Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment(2015)26 cited
- → AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating(2015)18 cited
- → Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors(2016)11 cited
- → Ultrathin Photo‐Oxidized Siloxane Layer for Extreme Wettability: Anti‐Fogging Layer for Spectacles(2016)11 cited