Yoshihiro Sato
Aoyama Gakuin University(JP)High Energy Accelerator Research Organization(JP)
Publications by Year
Research Areas
Particle accelerators and beam dynamics, Welding Techniques and Residual Stresses, Particle Accelerators and Free-Electron Lasers, Semiconductor materials and devices, GaN-based semiconductor devices and materials
Most-Cited Works
- → Direct Observation of Sequential Weak Decay of a Double Hypernucleus(1991)276 cited
- → Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage(2010)150 cited
- → C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE(2006)134 cited
- → High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse(2008)111 cited
- → Collapse of the f-symmetric final-state wavefunction in the 3d excitation spectra of atomic Xe, Cs and Ba(1984)89 cited
- → The 2pπ*–3dπ interaction in aromatic silanes. Fluorescence from the 1(2pπ, 3dπ) intramolecular charge-transfer state(1984)83 cited