Myoung‐Jae Lee
Daegu Gyeongbuk Institute of Science and Technology(KR)Next Generation Technology (United States)(US)Institute of Nanotechnology(GB)Convergence(US)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Transition Metal Oxide Nanomaterials, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Thin-Film Transistor Technologies
Most-Cited Works
- → A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures(2011)2,172 cited
- → Reproducible resistance switching in polycrystalline NiO films(2004)932 cited
- → Electrical observations of filamentary conductions for the resistive memory switching in NiO films(2006)529 cited
- → Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses(2005)519 cited
- → Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory(2007)434 cited
- → Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory(2009)412 cited