Yingkui Zheng
Chinese Academy of Sciences(CN)Chinese Academy of Sciences(CN)Institute of Microelectronics(CN)University of Chinese Academy of Sciences(CN)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials, Silicon Carbide Semiconductor Technologies, ZnO doping and properties
Most-Cited Works
- → Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices(2017)112 cited
- → Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)(2019)97 cited
- → Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer(2015)75 cited
- → High RF Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique(2015)60 cited
- → Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures(2018)60 cited
- → High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation