Mitsuaki Shimizu
National Institute of Advanced Industrial Science and Technology(JP)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials, Silicon Carbide Semiconductor Technologies, ZnO doping and properties
Most-Cited Works
- → In vivo pressure estimation using subharmonic contrast microbubble signals: proof of concept(2005)101 cited
- → Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations(2017)99 cited
- → High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator(2006)96 cited
- → Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate(2017)87 cited
- → Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers(2017)85 cited
- → Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy(2003)73 cited