M. Wesołowski
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Semiconductor Lasers and Optical Devices, Semiconductor materials and interfaces, GaN-based semiconductor devices and materials, Semiconductor materials and devices
Most-Cited Works
- → Graphene growth on Ge(100)/Si(100) substrates by CVD method(2016)99 cited
- → Fractal-like model of porous silicon(2002)26 cited
- → Influence of covering on critical thickness of strained InxGa1−xAs layer(2002)11 cited
- → Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl(2011)10 cited
- → DLTS study of deep levels in GRIN–SCH–SQW GaAs/AlGaAs laser diode structures grown by MBE(2001)9 cited
- → Coupled-cavity AlInAs/InGaAs/InP quantum cascade lasers fabricated by focused ion beam processing(2018)4 cited
- → Characterization ofAIIIBVsuperlattices by means of synchrotron diffraction topography and high-resolution X-ray diffraction(2017)3 cited
- → <title>SIMS study of atom migration in GaAs/AlGaAs quantum well laser structures</title>(2000)3 cited
- → The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer(2008)3 cited
- → Visible Light Emission from Porous Silicon(1992)2 cited