Arnaud Curutchet
Université de Bordeaux(FR)Laboratoire de l'Intégration du Matériau au Système(FR)Institut Polytechnique de Bordeaux(FR)Centre Émile Durkheim(FR)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Radio Frequency Integrated Circuit Design, Silicon Carbide Semiconductor Technologies, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Long-Term Stable Organic Photodetectors with Ultra Low Dark Currents for High Detectivity Applications(2016)232 cited
- → Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design(2013)122 cited
- → Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature(2010)19 cited
- → AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements(2006)16 cited
- → Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates(2003)14 cited
- → Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test(2015)9 cited