Mingda Zhu
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies, Ga2O3 and related materials, Semiconductor materials and devices, Terahertz technology and applications
Most-Cited Works
- → Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators(2012)256 cited
- → Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown(2015)194 cited
- → 1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability(2015)188 cited
- → 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon(2015)182 cited
- → Terahertz imaging employing graphene modulator arrays(2013)124 cited
- → 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy(2017)72 cited
- → Strained GaN quantum-well FETs on single crystal bulk AlN substrates(2017)68 cited
- → Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel(2018)66 cited
- → GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2(2015)63 cited
- → High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy(2015)61 cited