P.K. Ko
Hong Kong University of Science and Technology(HK)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Silicon Carbide Semiconductor Technologies, Integrated Circuits and Semiconductor Failure Analysis, Thin-Film Transistor Technologies
Most-Cited Works
- → A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors(1990)874 cited
- → BSIM: Berkeley short-channel IGFET model for MOS transistors(1987)582 cited
- → A physics-based MOSFET noise model for circuit simulators(1990)256 cited
- → A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation(2002)210 cited
- → Berkeley reliability tools-BERT(1993)197 cited
- → A simple method to characterize substrate current in MOSFET's(1984)192 cited
- → An engineering model for short-channel MOS devices(1988)160 cited
- → Dependence of channel electric field on device scaling(1985)141 cited
- → High-gain lateral bipolar action in a MOSFET structure(1991)107 cited
- → A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation(1991)107 cited