Seung Dam Hyun
Samsung (South Korea)(KR)
Publications by Year
Research Areas
Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Ferroelectric and Piezoelectric Materials, MXene and MAX Phase Materials, Electronic and Structural Properties of Oxides
Most-Cited Works
- → A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement(2015)268 cited
- → Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films(2016)236 cited
- → Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films(2017)230 cited
- → Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling(2015)173 cited
- → Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films(2016)132 cited
- → Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories(2018)131 cited
- → Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors(2017)126 cited
- → A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices(2019)121 cited
- → Preparation and characterization of ferroelectric Hf0.5Zr0.5O2thin films grown by reactive sputtering(2017)107 cited
- → Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers(2016)85 cited