Kyooho Jung
Samsung (South Korea)(KR)Samsung Advanced Institute of Technology (South Korea)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Electronic and Structural Properties of Oxides, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices
Most-Cited Works
- → Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films(2007)150 cited
- → Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions(2009)70 cited
- → Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films(2008)69 cited
- → Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory(2010)55 cited
- → Understanding Self-Aligned Planar Growth of InAs Nanowires(2013)52 cited
- → Resistance switching characteristics in Li-doped NiO(2008)51 cited
- → Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film(2010)46 cited
- → Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications(2006)46 cited
- → Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components(2011)40 cited
- → Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions(2009)33 cited