Masaharu Oshima
Institute for Solid State Physics and Optics(HU)The University of Tokyo(JP)
Publications by Year
Research Areas
Electron and X-Ray Spectroscopy Techniques, Semiconductor materials and devices, ZnO doping and properties, GaN-based semiconductor devices and materials, Electronic and Structural Properties of Oxides
Most-Cited Works
- → Carbon Alloy Catalysts: Active Sites for Oxygen Reduction Reaction(2008)495 cited
- → X-ray absorption analysis of nitrogen contribution to oxygen reduction reaction in carbon alloy cathode catalysts for polymer electrolyte fuel cells(2008)464 cited
- → Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms(2012)296 cited
- → Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors(1991)244 cited
- → First-principles calculation of the electronic properties of graphene clusters doped with nitrogen and boron: Analysis of catalytic activity for the oxygen reduction reaction(2009)191 cited
- → Interplay between nitrogen dopants and native point defects in graphene(2012)