D. Osintsev
TU Wien(AT)Volgograd Institute of Business(RU)
Publications by Year
Research Areas
Semiconductor materials and devices, Quantum and electron transport phenomena, Advancements in Semiconductor Devices and Circuit Design, Magnetic properties of thin films, Physics of Superconductivity and Magnetism
Most-Cited Works
- → Predictive Hot-Carrier Modeling of n-Channel MOSFETs(2014)82 cited
- → Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer(2011)25 cited
- → Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling(2012)17 cited
- → Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels(2012)10 cited
- → Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures(2015)9 cited
- → Reduction of momentum and spin relaxation rate in strained thin silicon films(2013)9 cited
- → Dependence of spin lifetime on spin injection orientation in strained silicon films(2015)5 cited
- → Valley splitting and spin lifetime enhancement in strained thin silicon films(2014)4 cited
- → Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer(2011)4 cited
- → Transport properties of spin field-effect transistors built on Si and InAs(2011)3 cited