Parhat Ahmet
Tokyo Institute of Technology(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and interfaces, Electronic and Structural Properties of Oxides, Ferroelectric and Negative Capacitance Devices
Most-Cited Works
- → Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide(2001)2,484 cited
- → Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy(2001)151 cited
- → Rapid and Reproducible Fabrication of Carbon Nanotube AFM Probes by Dielectrophoresis(2004)124 cited
- → ZnO–CoO solid solution thin films(2001)124 cited
- → Insulator-metal transition induced by interlayer coupling inLa0.6Sr0.4MnO3/SrTiO3superlattices(2001)103 cited
- → Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon(2005)101 cited
- → Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors(2001)85 cited
- → Cobalt valence states and origins of ferromagnetism in Co doped TiO2 rutile thin films(2004)70 cited
- → Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal films(2002)64 cited
- → High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation(2001)62 cited