A. Usui
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Ga2O3 and related materials, Semiconductor materials and devices
Most-Cited Works
- → Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation(2003)282 cited
- → Recombination of free and bound excitons in GaN(2008)128 cited
- → Evidence for Two Mg Related Acceptors in GaN(2009)123 cited
- → Detection of Interstitial Ga in GaN(2000)120 cited
- → Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance(2004)49 cited
- → Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation(2002)45 cited
- → Transient photoluminescence of shallow donor bound excitons in GaN(2010)38 cited
- → Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy(2007)20 cited
- → Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance(2004)17 cited
- → Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers(1985)14 cited