D.Q. Kelly
Finisar (United States)(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and interfaces, Nanowire Synthesis and Applications, Silicon Nanostructures and Photoluminescence
Most-Cited Works
- → Continuous liquid interface production of 3D objects(2015)2,172 cited
- → Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication(2007)51 cited
- → Band-Engineered Low PMOS V<inf>T</inf> with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme(2007)36 cited
- → Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier(2006)24 cited
- → Improved Hot-Electron Reliability in Strained-Si nMOS(2004)20 cited
- → Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications(2007)18 cited
- → Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications(2006)17 cited
- → High Performance pMOSFETs Using Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node(2007)17 cited
- → Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT(2008)15 cited
- → High-power VCSEL arrays for consumer electronics(2015)15 cited