Hyung‐Joong Yun
Korea Basic Science Institute(KR)
Publications by Year
Research Areas
Semiconductor materials and interfaces, Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, Silicon Nanostructures and Photoluminescence, GaN-based semiconductor devices and materials
Most-Cited Works
- → Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer(2019)61 cited
- → Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer(2014)56 cited
- → Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments(2019)52 cited
- → Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer(2012)40 cited
- → Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer(2015)27 cited
- → Chemical and Structural Properties of Polyethyleneimine Film Coated on a SiO<sub>2</sub> Substrate in Different Concentrations(2014)27 cited
- → Effect of oxygen vacancies in the magnetic properties of the amorphous CoFe2O4 films(2016)25 cited
- → Energy-level alignment and electrical properties of Al/p-type Si Schottky diodes with sorbitol-doped PEDOT:PSS as an organic interlayer(2015)25 cited
- → Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode(2016)24 cited
- → Hydrogen incorporation induced the octahedral symmetry variation in VO2 films(2016)24 cited