Stanislav I. Soloviev
GE Global Research (United States)(US)
Publications by Year
Research Areas
Silicon Carbide Semiconductor Technologies, Thin-Film Transistor Technologies, Semiconductor materials and devices, Semiconductor materials and interfaces, Integrated Circuits and Semiconductor Failure Analysis
Most-Cited Works
- → Magnetic Storms in October 2003(2004)104 cited
- → Impact Ionization Coefficients in 4H-SiC(2008)86 cited
- → Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs(2008)80 cited
- → Deep UV photon-counting detectors and applications(2009)65 cited
- → Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations(2010)55 cited
- → Solar-Blind 4H-SiC Single-Photon Avalanche Diode Operating in Geiger Mode(2008)47 cited
- → Investigation of boron diffusion in 6H-SiC(2003)43 cited
- → Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection(2008)43 cited
- → Selective doping of 4H–SiC by codiffusion of aluminum and boron(2001)31 cited
- → Doping of 6H–SiC by selective diffusion of boron(2000)25 cited