I. L. Krestnikov
Innolume (Germany)(DE)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Semiconductor Lasers and Optical Devices, Photonic and Optical Devices, Quantum Dots Synthesis And Properties, GaN-based semiconductor devices and materials
Most-Cited Works
- → InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm(1999)377 cited
- → The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers(2004)246 cited
- → High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers(2005)149 cited
- → Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix(1998)138 cited
- → Quantum dot origin of luminescence in InGaN-GaN structures(2002)109 cited
- → Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices(2001)98 cited
- → Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth(2006)96 cited
- → Femtosecond high-power quantum dot vertical external cavity surface emitting laser(2011)94 cited
- → Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix(1996)89 cited
- → Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser(1999)81 cited