Ku-Feng Lin
Taiwan Semiconductor Manufacturing Company (Taiwan)(TW)
Publications by Year
Research Areas
Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Protein Structure and Dynamics, Parallel Computing and Optimization Techniques
Most-Cited Works
- → A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability(2011)247 cited
- → 19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme(2014)149 cited
- → A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes(2013)96 cited
- → A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time(2012)80 cited
- → Inhibition of TDP-43 Aggregation by Nucleic Acid Binding(2013)76 cited
- → Binding Mechanism of Nonspecific Lipid Transfer Proteins and Their Role in Plant Defense(2004)75 cited
- → Characterization and Structural Analyses of Nonspecific Lipid Transfer Protein 1 from Mung Bean,(2005)61 cited
- → A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications(2010)45 cited
- → A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process(2020)45 cited
- → Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology(2013)40 cited