Godeuni Choi
Pohang University of Science and Technology(KR)Gwangju Institute of Science and Technology(KR)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices, Electronic and Structural Properties of Oxides
Most-Cited Works
- → Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications(2011)296 cited
- → High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays(2012)149 cited
- → Ultrathin (&amp;lt;10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications(2012)80 cited
- → Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing(2013)77 cited
- → Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories(2013)66 cited
- → Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications(2012)34 cited
- → Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices(2012)33 cited
- → Varistor-type bidirectional switch (J<inf>MAX</inf>&#x003E;10<sup>7</sup>A/cm<sup>2</sup>, selectivity&#x223C;10<sup>4</sup>) for 3D bipolar resistive memory arrays(2012)31 cited
- → Selector-less RRAM with non-linearity of device for cross-point array applications(2013)28 cited
- Multi-layer tunnel barrier (Ta 2 O 5 /TaO x /TiO 2 ) engineering for bipolar RRAM selector applications(2013)