S. Siddiqui
Shaheed Zulfiqar Ali Bhutto Institute of Science and Technology(PK)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Copper Interconnects and Reliability, Integrated Circuits and Semiconductor Failure Analysis, Semiconductor materials and interfaces
Most-Cited Works
- → A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels(2016)139 cited
- → High performance 14nm SOI FinFET CMOS technology with 0.0174&#x00B5;m<sup>2</sup> embedded DRAM and 15 levels of Cu metallization(2014)128 cited
- → A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications(2011)81 cited
- → Future on-chip interconnect metallization and electromigration(2018)69 cited
- → Tungsten and cobalt metallization: A material study for MOL local interconnects(2016)63 cited
- → Experimental study of nanoscale Co damascene BEOL interconnect structures(2016)52 cited
- → Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires(2017)43 cited
- → BEOL process integration for the 7 nm technology node(2016)35 cited
- → Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness(2013)29 cited
- → A comparative study of strain and Ge content in Si<inf>1−x</inf>Ge<inf>x</inf> channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs(2017)24 cited