J. L. Alay
Publications by Year
Research Areas
Semiconductor materials and devices, Electron and X-Ray Spectroscopy Techniques, Ion-surface interactions and analysis, Semiconductor materials and interfaces, Silicon and Solar Cell Technologies
Most-Cited Works
- → The valence band alignment at ultrathin SiO2/Si interfaces(1997)162 cited
- → Correlation between XPS, Raman and TEM measurements and the gas sensitivity of Pt and Pd doped SnO 2 based gas sensors(1998)128 cited
- → Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides(1995)62 cited
- → Influence of oxygen on the formation of ripples on Si(1993)55 cited
- → Parameter optimisation in SnO2 gas sensors for NO2 detection with low cross-sensitivity to CO: sol–gel preparation, film preparation, powder calcination, doping and grinding(2000)47 cited
- → Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia(2000)46 cited
- → Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy(1995)30 cited
- → Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture(1999)28 cited
- → Model for the emission ofSi+ions during oxygen bombardment of Si(100) surfaces(1994)26 cited
- → RBS, AES and XPS analysis of ion beam induced nitridation of Si and SiGe alloys(1994)22 cited