Kenji Kurishima
NTT (Japan)(JP)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Photonic and Optical Devices, Radio Frequency Integrated Circuit Design, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Lasers and Optical Devices
Most-Cited Works
- → Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors(1994)102 cited
- → Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base(2002)74 cited
- → Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation(1996)55 cited
- → Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures(1992)49 cited
- → Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers(2014)49 cited
- → Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors(1995)43 cited
- → Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications(2002)41 cited
- → Low-Cost Optoelectronic Self-Injection-Locked Oscillators(2008)38 cited
- → High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter(2009)37 cited
- Electrical PMD equalizer ICs for a 40-Gbit/s transmission(2004)