M.M.R. Howlader
McMaster University(CA)
Publications by Year
Research Areas
3D IC and TSV technologies, Electronic Packaging and Soldering Technologies, Semiconductor materials and devices, Semiconductor materials and interfaces, Advanced MEMS and NEMS Technologies
Most-Cited Works
- → Room temperature Cu–Cu direct bonding using surface activated bonding method(2003)332 cited
- → Room temperature wafer level glass/glass bonding(2005)85 cited
- → Wafer Level Surface Activated Bonding Tool for MEMS Packaging(2004)73 cited
- → Room-Temperature Microfluidics Packaging Using Sequential Plasma Activation Process(2006)64 cited
- → Room temperature bonding of silicon and lithium niobate(2006)59 cited
- → Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature(2002)54 cited
- → Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature(2001)49 cited
- → Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C(2010)41 cited
- → Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C(2010)37 cited
- → Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale(2010)35 cited