E. V. Lutsenko
National Academy of Sciences of Belarus(BY)B.I. Stepanov Institute of Physics(BY)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, ZnO doping and properties, Solid State Laser Technologies
Most-Cited Works
- → Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire(2010)57 cited
- → Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers(2013)51 cited
- → Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3(2014)43 cited
- → AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique(2008)41 cited
- → High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval(2016)36 cited
- → Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals