Bong Jin Kuh
Samsung (South Korea)(KR)Hanyang University(KR)
Publications by Year
Research Areas
Semiconductor materials and devices, Advanced Memory and Neural Computing, Ferroelectric and Piezoelectric Materials, Advancements in Semiconductor Devices and Circuit Design, Thin-Film Transistor Technologies
Most-Cited Works
- → Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips(2022)238 cited
- → Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics(2022)164 cited
- → Highly manufacturable high density phase change memory of 64Mb and beyond(2005)84 cited
- → Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb(2005)71 cited
- → High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach(2022)66 cited
- → Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -(2023)64 cited
- → Negative differential capacitance in ultrathin ferroelectric hafnia(2023)58 cited
- → Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer(2024)42 cited
- → First demonstration of 3-dimensional stacked FET with top/bottom source-drain isolation and stacked n/p metal gate(2023)35 cited
- → Integration of Silicon Photonics into DRAM Process(2013)32 cited