Masahiko Hata
Itochu (Japan)(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Semiconductor materials and interfaces
Most-Cited Works
- → Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding(2009)82 cited
- → High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <tex-math notation="TeX">$V_{\rm th}$ </tex-math></inline-formula> Tunability(2014)65 cited
- → III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface(2010)64 cited
- → Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators(2014)64 cited
- → Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers(2011)62 cited
- → Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy(2011)60 cited
- → High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels(2009)53 cited
- → Formation of III–V-on-insulator structures on Si by direct wafer bonding(2013)52 cited
- → Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation(2012)50 cited
- → High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions(2015)49 cited