0 references
P‐6.6: Fabrication of Cu BCE‐structure IGZO TFTs for 85‐inch 8K4K 120Hz GOA LCD Display
SID Symposium Digest of Technical Papers2018Vol. 49(S1), pp. 611–614
Xiao Wang, Shi‐Min Ge, Shan Li, Mengxuan Jiang, Yanhong Meng, Wei Wu, Feng Zhu, Gongtan Li, Jingjing Liu, Long‐Qiang Shi, Feng Zhao, D Park, Chung‐Yi Chiu, Chia-Yu Lee
Abstract
The electrical characteristics of the back‐channel‐etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a‐IGZO) thin‐film transistors (TFTs) were studied. The passivation layer ,the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE‐structure. The negative and positive bias temperature stress results revealed that the optimized GOA TFTs exhibited good device reliability. Finally, a high performance 85‐inch 8K4K 120Hz GOA LCD was demonstrated.
Related Papers
- → Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors(2012)49 cited
- → Trends of marketing and technology in TFT-LCD(2002)1 cited
- TFT-LCD 산업에서의 공정관리(2005)
- [Session Q] TFT-LCD 공장의 생산계획 수립에 관한 연구(2001)