Long‐Qiang Shi
San’an Optoelectronics (China)(CN)
Publications by Year
Research Areas
Thin-Film Transistor Technologies, Silicon and Solar Cell Technologies, CCD and CMOS Imaging Sensors, Organic Light-Emitting Diodes Research, Transition Metal Oxide Nanomaterials
Most-Cited Works
- → Synthesis, Structure, Properties, and Application of a Carbazole‐Based Diaza[7]helicene in a Deep‐Blue‐Emitting OLED(2012)146 cited
- → 7‐2: Design of Highly Reliable Depletion‐Mode a‐IGZO TFT Gate Driving Circuit for 31‐in. 8K4K 287‐ppi TFT‐LCD(2017)18 cited
- → 42‐1: Development of Cu BCE‐Structure IGZO TFT for a High‐ppi 31‐in. 8K × 4K GOA LCD(2017)18 cited
- → 51.1: Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with High Mobility and Reliability(2015)10 cited
- → P‐19: Suppression of Light Induced Instability of BCE InGaZnO Transistors and Panel Flicker Improvement for 32‐in. 8K4K LCD(2017)5 cited
- → 28‐3: World's First 85‐in. 120Hz‐Driven 8K x 4K BCE IGZO GOA VA‐LCD(2018)4 cited
- → 53‐2: Development of Cu BCE‐structure IGZO TFT for High‐ppi 85‐in. 8K x 4K 120Hz GOA LCD(2018)3 cited
- → 58.4: A 31‐inch 4K2K WRGB AMOLED TV with High‐Stability IGZO Back Plane(2015)2 cited
- → 58.1: A 31‐in. FHD AM‐OLED Display using Amorphous IGZO TFTs and RGB FMM(2014)2 cited
- → Dual-Gate a-IGZO TFTs for Gate Driver Application(2021)2 cited