53‐2: Development of Cu BCE‐structure IGZO TFT for High‐ppi 85‐in. 8K x 4K 120Hz GOA LCD
SID Symposium Digest of Technical Papers2018Vol. 49(1), pp. 702–705
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Shi‐Min Ge, Shan Li, Shujhih Chen, Xiao Wang, Yanhong Meng, Wen Shi, Wei Wu, Feng Zhu, Yue Wu, Gongtan Li, Jingjing Liu, Mengxuan Jiang, Long‐Qiang Shi, Feng Zhao, Hyun‐Sik Seo, Chung‐Yi Chiu, Chia-Yu Lee
Abstract
The electrical characteristics of back‐channel‐etched (BCE)‐structure indium‐gallium‐zinc‐oxide (IGZO) thin‐film transistors (TFTs) were studied. Through modifying the passivation layer and optimizing the selection of color‐filter material and the design of the gate‐driver‐on‐array (GOA) TFT structure, the GOA TFTs were made to exhibit good device reliability. Finally, a high‐performance 85‐in. 8K x 4K 120Hz GOA LCD was demonstrated.
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