51.1: Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with High Mobility and Reliability
SID Symposium Digest of Technical Papers2015Vol. 46(1), pp. 766–768
Citations Over Time
Tao Sun, Long‐Qiang Shi, Chih‐Yu Su, Wenhui Li, Xiaowen Lv, He‐Jing Zhang, Yanhong Meng, Wen Shi, Shi‐Min Ge, Chih‐Yuan Tseng, Yi‐Fan Wang, Chang‐Cheng Lo, Alan Lien
Abstract
A high‐mobility amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide (a‐IGZTO) TFT was demonstrated. The new TFT achieved a large field effect mobility of ~24.7 cm 2 /Vs, which had a comparable reliability to the a‐IGZO TFT. Furthermore, 4K×2K AMOLED TV addressed by the a‐IGZTO TFT showed a good performance.
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