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61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane
SID Symposium Digest of Technical Papers2020Vol. 51(1), pp. 913–916
Abstract
We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high resolution organic light‐emitting diode (OLED) displays. The 1st TFT layer is bulk‐accumulation mode and 2nd TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm 2 /Vs and 0~1V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 µm and a pitch of 18.6 µm was developed exhibiting well shifted signal up to the last stage of 900‐stages without output degradation, which could be used for 1360 ppi, TFT backplane.
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- → 61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane(2020)