Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid
Citations Over TimeTop 10% of 2009 papers
Abstract
Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that is now well understood and accepted. This surface has become a standard for studies of surface science and an important component in silicon device processing for microelectronics, energy, and sensor applications. The present work shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface termination, whether the surface is carbon or silicon terminated. Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl termination, resulting from the inability of HF to remove the last oxygen layer at the oxide/SiC interface. The final surface chemistry and stability critically depend on the crystal face and surface stoichiometry. These surface properties affect the ability to chemically functionalize the surface and therefore impact how SiC can be used for biomedical applications.
Related Papers
- → Silicon etching mechanism and anisotropy in CF4+O2 plasma(1983)43 cited
- → The Influence of NH 4 F on the Etch Rates of Low Pressure Chemical Vapor Deposition Arsenosilicate Glasses in Buffered Oxide Etch(1993)4 cited
- → Formation of Individual Holes in Amorphous SiO2 by Swift Heavy-Ion Bombardment Followed by Wet and Dry Etching(2000)6 cited
- Fabrication of Super-hydrophobic Surfaces on Aluminum Alloy by Chemical Etching Method(2010)
- → Acid Chemical Etching for Ge-In Alloyed Junction Element(1969)