Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells
Journal of Chemical & Engineering Data2009Vol. 54(6), pp. 1698–1701
Citations Over TimeTop 10% of 2009 papers
Roberto Fallica, Jean‐Luc Battaglia, S. Cocco, Cristiano Monguzzi, A. R. Teren, Claudia Wiemer, E. Varesi, Raimondo Cecchini, Andrea Gotti, M. Fanciulli
Abstract
The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) and of Si3N4 and SiO2 have been studied to obtain reliable values for device modeling. Thermal conductivity was determined, along with a quantitative estimation of the thermal resistances of the layers’ interfaces, not negligible for highly scaled devices. Electrical resistivity of the chalcogenide material has also been investigated during the phase transition by in situ measurement at constant heating rate.
Related Papers
- → The Investigation of Forward and Backward Brillouin Scattering in High-Q Chalcogenide Microspheres(2022)13 cited
- Properties of chalcogenide glasses(2004)
- Glass formation, structure, and stimulated transformaitons in chalcogenide glasses(2004)
- → Engineering Glassy Chalcogenide Materials for Integrated Optics Applications(2003)8 cited
- Chalcogenide Glass for Passive Infrared Applications(2003)