Mass Transport Model for Semiconductor Nanowire Growth
The Journal of Physical Chemistry B2005Vol. 109(28), pp. 13567–13571
Citations Over TimeTop 1% of 2005 papers
Abstract
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
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