Self-Aligned, Gated Arrays of Individual Nanotube and Nanowire Emitters
Nano Letters2004Vol. 4(9), pp. 1575–1579
Citations Over TimeTop 10% of 2004 papers
L. Gangloff, E. Minoux, K. B. K. Teo, P. Vincent, V. Semet, Vu Thien Binh, Min Yang, Ian Y.Y. Bu, Rodrigo G. Lacerda, G. Pirio, J. P. Schnell, Didier Pribat, D. G. Hasko, G.A.J. Amaratunga, W. I. Milne, P. Legagneux
Abstract
We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.
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