Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Citations Over TimeTop 1% of 2007 papers
Abstract
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.
Related Papers
- → Preparation and photoluminescence properties of amorphous silica nanowires(2001)170 cited
- → Fundamental Strategy for Creating VLS Grown TiO2 Single Crystalline Nanowires(2012)32 cited
- → Real-Time Observation of Collector Droplet Oscillations during Growth of Straight Nanowires(2014)19 cited
- → B-doping of vapour–liquid–solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B2H6gas during Si nanowire growth and B-doping by a post-synthesisin situplasma process(2007)29 cited
- Growth and characterisation of ZnSe semiconductor nanowires(2011)